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Insulated Gate Bipolar Transistor(IGBT)

产品型号PDICVCESVCE(sat)VGE(th)封装
TYPE(W)(A)(V)(V)IC(A)VGE (V)VCE(V)IC(mA)MIN.MAX.Package
clear
152 30 650 1.85 15 15 30 1 4.5 6.5 TO-220FL
150 30 1200 2.5 15 15 15 0.6 4.5 6.5 TO-247
350 50 1200 2.45 25 15 15 0.6 4.5 6.5 TO-247
69 12 650 1.98 6 15 5 1 5.3 5.3 TO-252
208 20 1200 2.4 10 15 15 0.4 5.2 6.5 TO-3P
186 30 1200 2.5 15 15 15 15 3.5 7.5 TO-3P
240 40 1200 2.5 20 15 15 15 3.5 7.5 TO-3P
312 50 1200 2.5 25 15 15 15 3.5 7.5 TO-3P
310 120 600 2.9 60 15 - 0.5 4 6 TO-3P
310 120 650 2.2 60 15 15 0.8 5.3 6.3 TO-3P
Total: 10 Page 1/1
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